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1. Identity statement
Reference TypeJournal Article
Siteplutao.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
IdentifierJ8LNKAN8RW/3C63EQE
Repositorydpi.inpe.br/plutao/2012/06.21.17.26   (restricted access)
Last Update2013:07.02.17.41.36 (UTC) administrator
Metadata Repositorydpi.inpe.br/plutao/2012/06.21.17.26.18
Metadata Last Update2018:06.04.23.39.04 (UTC) administrator
DOI10.1016/j.vacuum.2012.03.049
ISSN0042-207X
Labellattes: 4955583664355437 2 OliveiraVieiUeda:2012:GrZnNa
Citation KeyOliveiraVieiUedaTóth:2013:GrZnNa
TitleGrowth of ZnO nanostructures on Si by means of plasma immersion ion implantation and deposition
Year2013
MonthMar.
Access Date2024, May 19
Secondary TypePRE PI
Number of Files2
Size1543 KiB
2. Context
Author1 Oliveira, Rogério de Moraes
2 Vieira, Maxson Souza
3 Ueda, Mário
4 Tóth, A
Resume Identifier1 8JMKD3MGP5W/3C9JJ6L
2
3 8JMKD3MGP5W/3C9JHSB
Group1 LAP-CTE-INPE-MCTI-GOV-BR
2 CMS-ETES-SPG-INPE-MCTI-GOV-BR
3 LAP-CTE-INPE-MCTI-GOV-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais (INPE)
2
3 Instituto Nacional de Pesquisas Espaciais (INPE)
4 CRC HAS, Inst Mat & Environm Chem, Budapest, Hungary.
Author e-Mail Address1 rogerio@plasma.inpe.br
2 maxson.vieira@gmail.com
3 ueda@plasma.inpe.br
e-Mail Addressmaxson.vieira@gmail.com
JournalVacuum
Volume89
Number1
Pages163-167
Secondary MarkB1 B1 B1 B1 B2 B3 B4
History (UTC)2012-06-22 00:10:59 :: lattes -> secretaria.cpa@dir.inpe.br :: 2012
2012-08-31 19:13:53 :: secretaria.cpa@dir.inpe.br -> banon :: 2012
2012-09-27 14:58:38 :: banon -> administrator :: 2012
2012-10-22 01:02:30 :: administrator -> secretaria.cpa@dir.inpe.br :: 2012
2013-01-07 17:48:28 :: secretaria.cpa@dir.inpe.br -> administrator :: 2012
2013-07-02 17:31:22 :: administrator :: 2012 -> 2013
2018-06-04 23:39:04 :: administrator -> marcelo.pazos@inpe.br :: 2013
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
KeywordsAFM image
Argon glow discharges
Coated surface
Composition analysis
DC voltage
Depth analysis
Nanoscale ranges
Nanothorns
Negative voltage
Oxide cathode
Plasma based ion implantation and deposition
Plasma immersion ion implantation and deposition
Plasma particles
Room temperature
Sample holders
Si substrates
Si surfaces
UV- and
Visible photoluminescence
XRD
Zinc oxide (ZnO)
Zn atoms
Zn deposition
ZnO
ZnO nanoparticles
ZnO nanostructures
ZnO on Si
Atomic force microscopy
Electric potential
Energy dispersive spectroscopy
Glow discharges
Ion implantation
Nanostructures
Photoelectrons
Photoluminescence
Photoluminescence spectroscopy
Plasma deposition
Scanning electron microscopy
Silicon
Stoichiometry
Thermionic emission
X ray diffraction
X ray photoelectron spectroscopy
Zinc
Zinc plating
AbstractCrystalline zinc oxide (ZnO) nanostructures have been grown on Si substrates by means of Plasma Based Ion Implantation and Deposition (PIII&D) at a temperature of about 300 C and in the presence of an argon glow discharge. In the process a crucible filled with small pieces of metallic zinc plays the role of the anode of the discharge itself, being polarized by positive DC voltage of about 400 V. Electrons produced by thermionic emission by an oxide cathode (Ba, Sr, Ca)O impact this crucible, causing its heating and vaporization of Zn. Partial ionization of Zn atoms takes place due to collisions with plasma particles. High negative voltage pulses (7 kV/40 ms/250 Hz) applied to the sample holder causes the implantation of metallic zinc into Si surface, while Zn deposition happens between pulses. After annealing at 700 C, strong UV and various visible photoluminescence bands are observed at room temperature, as well as the presence of ZnO nanoparticles. The coated surface was characterized in detail using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy. XRD indicated the presence of only ZnO peaks after annealing. The composition analysis by EDS revealed distinct Zn/O stoichiometry relation depending on the conditions of the process. AFM images showed the formation of columns in the nanoscale range. Topography viewed by SEM showed the formation of structures similar to cactus with nanothorns. Depth analysis performed by XPS indicated an increase of concentration of metallic Zn with increasing depth and the exclusive presence of ZnO for outer regions. PIII&D allowed to growing nanostructures of ZnO on Si without the need of a buffer layer.
AreaFISPLASMA
doc Directory Contentaccess
source Directory Contentthere are no files
agreement Directory Contentthere are no files
4. Conditions of access and use
Languageen
Target FileGrowth of ZnO nanostructures on Si by means of plasma immersion ion implantation and deposition.pdf
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5. Allied materials
LinkingTrabalho Vinculado à Tese/Dissertação
Mirror Repositoryiconet.com.br/banon/2006/11.26.21.31
Next Higher Units8JMKD3MGPCW/3ET2RFS
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Citing Item Listsid.inpe.br/bibdigital/2013/10.14.21.39 4
sid.inpe.br/mtc-m21/2012/07.13.14.59.24 2
sid.inpe.br/bibdigital/2013/09.25.21.49 1
DisseminationWEBSCI; PORTALCAPES; COMPENDEX; SCOPUS.
Host Collectiondpi.inpe.br/plutao@80/2008/08.19.15.01
6. Notes
Notes17th International Conference on Surface Modification of Materials by Ion Beams (SMMIB), Harbin, PEOPLES R CHINA, SEP 13-17, 2011
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